Description

---

Chapter 1. Device Stability and Photo-Excited Charge-Collection Spectroscopy.
1.1. Thin-film transistor architectures for photon probe measurements.
1.2. Device physics and equations for thin-film transistors.
1.3. Stability issues: Hysteresis by Gate Voltage Sweep.
1.4. Stability issues: Bias-Temperature-Stress.
1.5. Stability issues: Photostability.
1.6. Stability issues: Back Channel Current.
1.7. Importance of dielectric/channel interface trap states.
1.8. Previous Interface Trap measurements.
1.9. Photo-Excited Charge-Collection Spectroscopy (PECCS).
1.10. Chapter summary.
Reference.

Chapter 2. Instrumentations for PECCS.
2.1. Introduction of PECCS measurements system.
2.2. Optical System for PECCS measurement.
2.3. Electrical measurement.
2.4. Data processing and analysis for DOS profile.
Reference.

Chapter 3. PECCS measurements in Organic FETs.
3.1. PECCS on small molecule-based p-channel FETs.
3.2. PECCS on small molecule-based n-channel FETs.
3.3. PECCS on polymer-based FETs.
3.4. Chapter summary.
Reference.

Chapter 4. PECCS measurements in Oxide FETs.
4.1. PECCS on ZnO based n-channel FETs.
4.2. PECCS on amorphous InGaZnO based n-channel FETs.
4.3. PECCS by Current-Voltage vs. Capacitance-Voltage method on amorphous Si and amorphous InGaZnOTFTs.
4.4. PECCS to observe interface- and bulk-originated trap densities in amorphous InGaZnOTFTs.
4.5. Chapter summary.
Reference.

Chapter 5. PECCS measurements in Nanostructure FETs.
5.1. PECCS on ZnO nanowire-based n-channel FETs.
5.2. PECCS measurements for the thickness-modulated bandgap of MoS2 nanosheets.
5.3. Chapter summary.
Reference

Chapter 6. Summary and limiting factors of PECCS.

About the Author

---

Seongil Im, applied physicist earned his Ph.D from Univ. of California at Berkeley at the dept. of MSE in 1994 and worked as a research fellow at the dept. of Applied Physics and Electrical Engineering in CALTECH from 1995 till 1996. He joined the dept. of MSE at Yonsei Univ. as an assistant professor in 1997. Currently he is a professor at Physics department. His research expertise is device physics and detailed research subjects are Oxide and Organic Thin-Film Electronics, Nanowire and Nanosheet FETs, and Photon-probe characterizations for device stabilities. He has published over 200 peer-review journal papers including many of Applied Physics Letters, Advanced Materials, Nano Letters, Journal of Materials Chemistry, and IEEE Electron Device Letters, etc. He is the recipient of year 2012 Yonsei University Academic Award and has worked as a referee of many journal papers of Wiely, AIP, ACS, and IEEE publishers. More than 20 invited talks in international symposiums he has given. Youn-Gyoung Chang, senior research engineer at LG Display R&D center from 1998 till now, received her MS degree of Materials Science and Engineering at Gwangju Institute Science in 1998 after BS of Physics at Ewha Womans Univ. in 1995. Since she joined LG Display, her career covers low temperature a-Si TFT development and driver panel design, LCD integration-process, printable TFTs-related back plane, and the instability analysis of oxide TFTs. She has published several journal papers sucha as IEEE Electron Device Letters, working as a part time Ph.D student at the department of physics, Yonsei University, Seoul, Korea.